Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance
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- 作者：Atanu Kundua ; kundu.atanu@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Arpan Dasguptaa ; Rahul Dasa ; Shramana Chakrabortya ; Arka Duttab ; Chandan K. Sarkarb
- 关键词：Underlap ; Gate stack ; Non quasi static approach ; Analog & RF performance of DG NMOSFET
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：94
- 期：Complete
- 页码：60-73
- 全文大小：3320 K
文摘
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Impact of Underlap on Gate Stack DG-MOSFET.
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Subthreshold Analog/RF Performance of Underlap on Gate Stack DG-MOSFET.
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Extraction of AC small signal parameters of Underlap on Gate Stack DG-MOSFET.
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RF parameters extraction using the Non Quasi Static (NQS) model of the U-DG MOSFET.
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Single stage amplifier analysis of the Gate Stack DG-MOSFET.