Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy
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- 作者：Stefan Stefanova ; Carmen Serrab ; Alessandro Benedettib ; Jorge Carlos Condea ; Jens Wernerc ; Michael Oehmec ; Jö ; rg Schulzec ; Stephan Wirthsd ; Dan Bucad ; Stefano Chiussia ; schiussi@uvigo.es" class="auth_mail
- 关键词：Germanium tin ; Silicon germanium tin ; Excimer laser microprocessing ; Pulsed Laser Induced Epitaxy
- 刊名：Microelectronic Engineering
- 出版年：1 August 2014
- 年：2014
- 卷：125
- 期：Complete
- 页码：18-21
- 全文大小：1172 K
文摘
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Pulsed Laser Induced Epitaxy provides controlled intermixing of Si/Ge/Sn in m scale.
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This techniques guaranties Si/Ge/Sn epitaxial alloying.
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Controlled depth and lateral concentration gradients of the three elements (Si, Ge and Sn) is observed.
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Mask Projection assisted PLIE offers simple routes for up and down scaling.