Quantum confinement in PbSe thin films electrodeposited by electrochemical atomic layer epitaxy (EC-ALE)

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• 作者：Vaidyanathan ; Raman ; Stickney ; John L. ; Happek ; Uwe
• 关键词：Electrodeposition ; Compound semiconductor ; PbSe ; IV&ndash ; VI ; Thin films ; EC-ALE ; upd ; Quantum confinement ; XRD
• 刊名：Electrochimica Acta
• 出版年：2004
• 出版时间：March 30, 2004
• 年：2004
• 卷：49
• 期：8
• 页码：1321-1326
• 全文大小：164 K

文摘

PbSe is a IV–VI compound semiconductor with a narrow band gap (0.26eV), used in photodetectors, photoresistors and photoemitters in the infrared (IR). This paper reports the first instance of PbSe formation by electrochemical atomic layer epitaxy (EC-ALE). The film’s composition and structure were characterized using electron probe microanalysis (EPMA) and X-ray diffraction (XRD), respectively. The optical properties were studied via infrared absorption measurements. Films were stoichiometric via EPMA, a Pb/Se ratio of one. XRD indicated the expected rock salt structure for PbSe, and a preferred (200) orientation. IR adsorption studies, of films grown with 10–50 cycles, showed strong blue shifts of the fundamental absorption edge, which was believed to result from quantum confinement in the thin films.