Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

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• 作者：K. Sawano^a ; ^{sawano@tcu.ac.jp" class="auth_mail} ; Y. Hoshi^a ; S. Endo^a ; T. Nagashima^a ; K. Arimoto^b ; J. Yamanaka^b ; K. Nakagawa^b ; S. Yamada^c ; K. Hamaya^c ; M. Miyao^c ; Y. Shiraki^a
• 关键词：Ge-on-Insulator ; Ge(111) ; Tensile strain ; Chemical mechanical polishing
• 刊名：Thin Solid Films
• 出版年：30 April, 2014
• 年：2014
• 卷：557
• 期：Complete
• 页码：76-79
• 全文大小：690 K

文摘

We demonstrate the (111)-oriented Ge-on-Insulator (GOI) formed by Ge epitaxial growth on a Si(111) and the layer transfer technique. The two-step growth manner, involving low-temperature growth of a thin Ge layer and subsequent high-temperature growth of a thick Ge layer, enables us to obtain high-quality tensile-strained epitaxial Ge(111) on Si(111). It is found that the strain amount straongly depends on the growth temperatures and we find an optimal growth temperature. We also developed a chemical mechanical polishing (CMP) method modified for Ge, offering the ultra-smooth Ge(111) surface. The polished epitaxial Ge is bonded on a SiO₂/Si, followed by the selective etching of Si and the final CMP of Ge. As a result, we achieve the high-quality 200-nm-thick tensile-strained Ge(111)-OI with an ultra-smooth surface, on which, furthermore, we demonstrate the growth of an epitaxial metallic silicide for the metal source/drain in spintronic devices as well as advanced Ge channel devices.