Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

详细信息    查看全文

• 作者：Cesare Frigeri^a ; ^{frigeri@imem.cnr.it} ; David Scarpellini^b ; ^c ; Alexey Fedorov^d ; Sergio Bietti^b ; Claudio Somaschini^b ; Vincenzo Grillo^a ; ^e ; Luca Esposito^b ; Marco Salvalaglio^b ; Anna Marzegalli^b ; Francesco Montalenti^b ; Stefano Sanguinetti^b ; ^d
• 关键词：Nanowires ; InAs/GaAs ; Self-assisted ; MBE ; TEM ; FEM
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：29-36
• 全文大小：2553 K
• 卷排序：395

文摘

We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. Structural, chemical and strain release investigations were performed by STEM. New MBE self-seeded method whereby InAs is grown by splitting In and As depositions.