The structural and electrical comparison of Y₂O₃ and Ti-doped Y₂O₃ dielectrics

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• 作者：Ming Ling Lee^a ; Chyuan Haur Kao^b ; ^d ; ^e ; ^{chkao@mail.cgu.edu.tw} ; Hsiang Chen^c ; Chan Yu Lin^d ; Yu Teng Chung^b ; Kow Ming Chang^a
• 关键词：Y2O3 ; Y2Ti2O5 ; Ti-doped
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：43
• 期：3
• 页码：3043-3050
• 全文大小：1901 K
• 卷排序：43

文摘

A Ti-doped Y2O3(Y2Ti2O5) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y2O3. The performance of high-k Y2O3 and Y2Ti2O5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y2O3 dielectric imparts improvements in the structural and electrical performance of the material. The Y2Ti2O5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.