Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots

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• 作者：M. Trempa^a ; ^{matthias.trempa@iisb.fraunhofer.de} ; I. Kupka^b ; C. Kranert^b ; T. Lehmann^b ; ¹ ; C. Reimann^a ; ^b ; J. Friedrich^a ; ^b
• 关键词：A1.Directional solidification ; A1.High performance multi-crystalline silicon ; A1.Grain structure ; A1.Grain boundaries ; A1.Recombination active defects
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：67-75
• 全文大小：1266 K
• 卷排序：459

文摘

Firstly grown 710 mm tall silicon ingots by successive growth of several G1 ingots. Detailed analysis of grain structure parameters and recombination active area. Grain structures of HPM and conventional silicon align each other after 300 mm growth. Recombination active area also becomes equal at taller ingot heights.