Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling

详细信息    查看全文

• 作者：Adeline Lanterne^a ; ^{adeline.lanterne@ntnu.no} ; Guilherme Gaspar^a ; Yu Hu^b ; Eivind Ø ; vrelid^c ; Marisa Di Sabatino^a
• 关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Dislocations ; B3. Solar cells
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：458
• 期：Complete
• 页码：120-128
• 全文大小：2714 K
• 卷排序：458

文摘

Characterization of the generation and propagation of dislocations during Cz silicon pulling. Delineation of the transition from a dislocation-free growth to a growth with dislocations. Observation of dislocations multiplication and of new grains nucleation. A gas bubble seems to be the cause of the structure loss.