Germanium-catalyzed growth of single-crystal GaN nanowires
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- 作者：Umar Saleema ; b ; Hong Wanga ; b ; ewanghong@ntu.edu.sg" class="auth_mail" title="E-mail the corresponding author ; David Peyrota ; Auré ; lien Oliviera ; b ; Jun Zhangc ; Philippe Coqueta ; b ; Serene Lay Geok Ngd
- 关键词：A1. Low dimensional structures ; A1. Nanostructures ; A2. Single crystal growth ; A3. Chemical vapor deposition processes ; B1. Nitrides
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：439
- 期：Complete
- 页码：28-32
- 全文大小：3766 K
文摘
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GaN nanowires have been grown on Silicon substrate using Germanium as catalyst.
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The nanowires are single crystalline and show a Wurtzite structure growing along the [0001] axis.
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The growth follows a Vapor–Liquid–Solid (VLS) mechanism.
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The synthesis of GaN nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.