MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density
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- 作者：Jonathan Marini ; jmarini@albany.edu" class="auth_mail" title="E-mail the corresponding author ; Jeffrey Leathersich ; Isra Mahaboob ; John Bulmer ; Neil Newman ; F. (Shadi) Shahedipour-Sandvik
- 关键词：A1. Atomic force microscopy ; A1. Hexagonal hillock ; A1. Polarity ; A3. Metalorganic chemical vapor deposition ; B1. Nitrides
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 May 2016
- 年：2016
- 卷：442
- 期：Complete
- 页码：25-30
- 全文大小：7614 K
文摘
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Optimization of buffer growth conditions can significantly reduce hillock density.
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This reduction is seen to be independent of surface morphology and crystal quality.
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Higher density of islands leads to reduced hillock density in overgrown films.