Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

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• 作者：Guanxi Piao^a ; ^{Piao.Guanxi@tn-sanso.co.jp} ; Kazutada Ikenaga^a ; Yoshiki Yano^a ; Hiroki Tokunaga^a ; Akira Mishima^a ; Yuzaburo Ban^b ; Toshiya Tabuchi^a ; Koh Matsumoto^a
• 关键词：A1. Impurities ; A3. Metalorganic chemical vapor deposition ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：456
• 期：Complete
• 页码：137-139
• 全文大小：719 K
• 卷排序：456

文摘

High purity GaN was grown on GaN substrate by high-flow-speed MOCVD. Carbon concentration in GaN was controlled with V/III ratio at high growth rate. Carbon concentration was controlled at 1015 cm−3.