HVPE GaN wafers with improved crystalline and electrical properties

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• 作者：J.A. Freitas Jr.^a ; ; J.C. Culbertson^a ; N.A. Mahadik^a ; T. Sochacki^b ; M. Iwinska^b ; M.S. Bockowski^b
• 关键词：A1. Characterization ; A1. Impurities ; A1. X-ray diffraction ; A2. Vapor phase epitaxy ; B1. Nitrides
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：456
• 期：Complete
• 页码：113-120
• 全文大小：2604 K
• 卷排序：456

文摘

Silicon and oxygen are the pervasive impurities associated with n-type conductivity. The concentration of oxygen remains constant across the sample. Silicon concentration is one order of magnitude larger at Ga-polar face of the crystal. The high crystalline quality of the Amonothermal substrate is preserved. Method to produce high crystalline quality substrates with low free carrier concentration.