Comprehensive study on the TID effects of 0.13 ¦Ìm partially depleted SOI NMOSFETs

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• 作者：Bingxu Ning ; ^{ningbx@mail.sim.ac.cn} ; Dawei Bi ; Huixiang Huang ; Zhengxuan Zhang ; Ming Chen ; Shichang Zou
• 关键词：Total ionizing dose (TID) ; Hysteresis ; Shallow trench isolation (STI) ; Subthreshold hump ; Positive trapped charge ; Narrow-channel device
• 刊名：Microelectronics Journal
• 出版年：2013
• 出版时间：February, 2013
• 年：2013
• 卷：44
• 期：2
• 页码：86-93
• 全文大小：1407 K

文摘

Total ionizing dose (TID) effects of 0.13 ¦Ìm partially depleted (PD) SOI NMOSFETs are overviewed in this paper. For core devices with floating body, the 2nd peak of the front-gate transconductance (g_m) degrades with incremental TID. Moreover, the 1st and 2nd peak of the drain current (I_ds) hysteresis also declines due to the increased recombination current at the back-gate interface after irradiation. The front-gate subthreshold hump effect is more obvious under the OFF (off-state) and TG (transmission gate) bias conditions. By contrast, the back-gate subthreshold hump exhibits a maximum negative shift under the ON (on-state) bias condition and causes the most significant hump effect owing to the largest charge accumulation at the bottom of the shallow trench isolation (STI) oxide. The maximum negative shift of the back-gate threshold voltage is observed under the TG bias condition, leading to the coupling effect. Finally, for narrow-channel devices, it is found that the radiation-induced positive trapped charge in the STI oxide will degrade the electron mobility in the front-gate channel region, leading to a g_m decrease because of the increased surface roughness scattering.