Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor
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- 作者：Ashok Srivastava ; ashok@ece.lsu.edu" class="auth_mail" title="E-mail the corresponding author ; eesriv@lsu.edu" class="auth_mail" title="E-mail the corresponding author ; Md S. Fahad
- 关键词：Vertical interlayer MoS2 FET ; hBN ; Tunnel FET
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：126
- 期：Complete
- 页码：96-103
- 全文大小：1695 K
文摘
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Interlayer tunnel transistor of molybdenum disulfide and hex-boron nitride has been proposed.
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Current transport has been modeled analytically.
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Low power operation is obtained at a subthreshold slope near 60 mV/decade.
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At 1.2 V the proposed device provides an operating frequency close to 19 THz.