Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

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• 作者：F. Jazaeri ; ^{Farzan.jazaeri@epfl.ch} ; L. Barbut ; A. Koukab ; J.-M. Sallese
• 关键词：Junctionless ; Double gate MOSFETs ; Nanowire ; Subthreshold ; DIBL ; Short channel effects
• 刊名：Solid-State Electronics
• 出版年：2013
• 出版时间：April, 2013
• 年：2013
• 卷：82
• 期：Complete
• 页码：103-110
• 全文大小：1097 K

文摘

In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along the channel, while assuming a parabolic potential across the silicon thickness, which in turn leads to some explicit relationships of the subthreshold current, subthreshold slope (SS) and drain induced barrier lowering (DIBL). This approach has been assessed with Technology Computer Aided Design (TCAD) simulations, confirming that this represents an interesting solution for further implementation in generic JL DG MOSFETs compact models.