Technological development of high-k dielectric FinFETs for liquid environment

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• 作者：S. Rigante^a ; ^{sara.rigante@epfl.ch" class="auth_mail} ; P. Scarbolo^b ; D. Bouvet^a ; M. Wipf^c ; K. Bedner^d ; A.M. Ionescu^a
• 关键词：FinFET ; Si-bulk ; Local SOI ; Finite element analysis ; High-k dielectric ; Microfluidic platform
• 刊名：Solid-State Electronics
• 出版年：August 2014
• 年：2014
• 卷：98
• 期：Complete
• 页码：81-87
• 全文大小：2215 K

文摘

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS = 72 mV/dec and high I_on/I_off ≈ 10⁶ ratio, with power consumption of the order of tens of nW. The FinFETs have also been proved to correctly behave in a liquid environment. We also present the HfO₂ characterization towards full pH response sensing applications.