An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering
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- 作者：Yogesh Pratapa ; yogi.pratap87@gmail.com" class="auth_mail ; Pujarini Ghosha ; puja510@gmail.com" class="auth_mail ; Subhasis Haldarb ; subhasis_haldar@rediffmail.com" class="auth_mail ; R.S. Guptac ; rsgupta1943@gmail.com" class="auth_mail ; Mridula Guptaa ; mridula@south.du.ac.in" class="auth_mail
- 关键词：Cylindrical gate all around (CGAA) MOSFET ; Short channel effects (SCEs) ; Dual-material (DM) ; Triple-material (TM) ; Graded channel (GC) ; Gate stack (GS)
- 刊名：Microelectronics Journal
- 出版年：April 2014
- 年：2014
- 卷：45
- 期：4
- 页码：408-415
- 全文大小：2546 K
文摘
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The analytical model is developed using super position technique.
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GC–GS with high metal work function exhibits minimum sub threshold characteristics.
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Reduced DIBL and subthreshold slope has been measured in combined design.
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Proper optimization of doping profile significantly reduces DIBL effect.
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Effectiveness of applying the three region doping profile concept in the channel has been examined.