A high performance high density vertically stacked SiNW FET structure has been electrically characterized for biosensor applications.
Structure has high drive currents 1.3 mA/渭m (normalized to an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV).
Excellent Ion/Ioff ratios >106.
Steep subthreshold slopes down to SS < 75 mV/dec.
High transconductances gm > 10 渭S.