Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
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- 作者：Elizabeth Buitragoa ; elizabeth.buitrago@epfl.ch" class="auth_mailAuthor Vitae ; Montserrat Ferná ; ndez-Bolañ ; os Badiaa ; b ; montserrat.fernandez-bolanos@epfl.ch" class="auth_mailAuthor Vitae ; Yordan M. Georgievc ; 1 ; yordan.georgiev@tyndall.ie" class="auth_mailAuthor Vitae ; Ran Yuc ; ran.yu@tyndall.ie" class="auth_mailAuthor Vitae ; Olan Lottyc ; olanlotty@gmail.com" class="auth_mailAuthor Vitae ; Justin D. Holmesc ; justin.holmes@tyndall.ie" class="auth_mailAuthor Vitae ; Adrian M. Nightingaled ; adrian.nightingale06@imperial.ac.uk" class="auth_mailAuthor Vitae ; Hoë ; l M. Guerina ; hoel.guerin@epfl.ch" class="auth_mailAuthor Vitae ; Adrian M. Ionescua ; adrian.ionescu@epfl.ch" class="auth_mailAuthor Vitae
- 关键词：ISFET ; Sensor ; FinFET ; SiNW ; GAA ; Ion sensitive field effect transistor
- 刊名：Sensors and Actuators B: Chemical
- 出版年：August 2014
- 年：2014
- 卷：199
- 期：Complete
- 页码：291-300
- 全文大小：3676 K
文摘
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A high performance high density vertically stacked SiNW FET structure has been electrically characterized for biosensor applications.
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Structure has high drive currents 1.3 mA/渭m (normalized to an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV).
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Excellent Ion/Ioff ratios >106.
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Steep subthreshold slopes down to SS < 75 mV/dec.
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High transconductances gm > 10 渭S.