Spontaneous lateral alignment of multistacked In_0.45Ga_0.55As quantum dots on GaAs(311)B substrate

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• 作者：Lee ; Jeong-Sik ; Sugisaki ; Mitsuru ; Ren ; Hong-Wen ; Sugou ; Shigeo ; Yasuaki ; Masumoto
• 关键词：73.61.Ey ; 78.66.Fd ; 81.05.Ea ; 81.15.Gh ; Quantum dots ; Self-alignment ; GaAs(311)B ; InGaAs ; Metalorganic ; Vapor-phase epitaxy
• 刊名：Journal of Crystal Growth
• 出版年：1999
• 出版时间：April 1, 1999
• 年：1999
• 卷：200
• 期：1-2
• 页码：77-84
• 全文大小：1.74 M

文摘

In_0.45Ga_0.55As/GaAs multistacking quantum dot (QD) structures were fabricated on a GaAs(3 1 1)B substrate by metalorganic vapor-phase epitaxy. QDs spontaneously aligned in the [0 1 1] direction were observed on stacked QDs, whereas QDs were randomly distributed at the first In_0.45Ga_0.55As layer growth. The formation mechanism for self-alignment was studied based on the number of In_0.45Ga_0.55As/GaAs multilayers, GaAs spacing layer thickness, and the nominal thickness of In_0.45Ga_0.55As dot structures. Photoluminescence spectra showing clear polarization dependence indicate carrier coupling in QD arrays.