Influence of Electrical Modes on Sensitivity of MISFET Ionizing Radiation Dose Sensors

详细信息    查看全文

• 作者：B. Podlepetsky ^{bipod45@gmail.com} ; Yu. Sukhoroslova
• 关键词：Dose sensors ; MISFET ; ionizing radiation
• 刊名：Procedia Engineering
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：168
• 期：Complete
• 页码：741-744
• 全文大小：413 K
• 卷排序：168

文摘

The influence of electrical modes on the radiation sensitivity of the sensors based on the metal-silicon dioxide-semiconductor field-effect transistor (RadFET) was experimentally investigated. The RadFETs were fabricated by means of conventional MOS-technology. There were measured the RadFET-based microdosimeter output voltages Vout as function of the X-rays radiation doses D for different drain currents ID and source-drain voltages VD. It was shown how the conversion function Vout(D) and the radiation sensitivity SD are depending on electrical modes. To interpret experimental data there were presented the models based on calculations the dependences of threshold voltage VT and specific slope (transconductance) b vs. D. These dependences were calculated from the experimental ID–VG characteristics measured before, during and after irradiations (value VG is the gate voltage).