SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure
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- 作者：R. Caballero ; raquel.caballero@uam.es" class="auth_mail" title="E-mail the corresponding author ; V. Condé ; M. Leó ; n
- 关键词：SnS ; Sulfurization ; SnS2 secondary phase ; Earth abundant ; Solar cells
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 August 2016
- 年：2016
- 卷：612
- 期：Complete
- 页码：202-207
- 全文大小：1481 K
文摘
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SnS thin films obtained by sulfurization of evaporated Sn layers
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Impact of sulfurization pressure on the development of the SnS/Mo interface
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Sulfurization temperature the most important factor for SnS single phase formation.
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SnS and secondary phase SnS2 were detected for sulfurization temperature > 230 °C.
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Orthorhombic and direct gap SnS was formed at sulfurization T of 220 °C for 240 min and PAr = 7.1 × 104 Pa.