Cu2ZnSnS4 solar cells prepared by sulfurization of sputtered ZnS/Sn/CuS precursors
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- 作者：Zhi-Shan Li ; Shu-Rong Wang ; shrw88@aliyun.com" class="auth_mail" title="E-mail the corresponding author ; Zhi Jiang ; Min Yang ; Yi-Lei Lu ; Si-Jia Liu ; Qi-Chen Zhao ; Rui-Ting Hao
- 关键词：Cu2ZnSnS4 (CZTS) thin films ; Sputtering ; Sulfurization temperatures ; Power conversion efficiency
- 刊名：Physica B: Physics of Condensed Matter
- 出版年：2016
- 出版时间：1 December 2016
- 年：2016
- 卷：502
- 期：Complete
- 页码：56-60
- 全文大小：1351 K
文摘
Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by sulfurization of sputtered ZnS/Sn/CuS precursors at different temperatures i.e. 560 °C, 580 °C and 600 °C. The effects of sulfurization temperature on the quality of CZTS thin films and solar cells were investigated. The crystal structure, surface morphology, chemical composition, phase purity and surface roughness of CZTS thin films fabricated at different sulfurization temperatures were characterized by X Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS), Raman spectroscopy and atomic force microscope (AFM), respectively. The results show that all CZTS thin films exhibit a polycrystalline kesterite structure and preferred (112) orientation. For the sulfurization temperature of 580 °C, the obtained CZTS thin films are dense and flat with larger grain size. Meanwhile composition studying indicates that the fabricated CZTS with single phase is copper poor and zinc rich. Furthermore, the surface roughness of CZTS film is the lowest. Finally, the CZTS solar cells with the structure of SLG/Mo/CZTS/CdS/i-ZnO/ITO/Al were fabricated and demonstrated the best power conversion efficiency of 3.59% when used sulfurization temperature was 580 °C.