Sulfurization and annealing effects on thermally evaporated CZTS films

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• 作者：Chinnaiyah Sripan^a ; ^b ; ^{srimannano2007@gmail.com} ; Vinod E. Madhavan^c ; Annamraju Kasi Viswanath^a ; R. Ganesan^b ; ^{rajamanickam.ganesan@gmail.com}
• 关键词：CZTS ; Chalcogenide ; X-ray diffraction ; Band gap
• 刊名：Materials Letters
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：189
• 期：Complete
• 页码：110-113
• 全文大小：515 K
• 卷排序：189

文摘

Pure CZTS kesterite phase is formed ≥450 °C annealing temperature. Crystallization of the CZTS films are enhanced by the sulfurization at 550 °C. Higher value of carrier concentration and mobility is found in the 550 °C sulfurized CZTS film. The band gap rearranges with annealing and sulfurization leading to an optimum band gap for higher absorption.