Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

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• 作者：Min-Gyu Sung^a ; Sook Joo Kim^a ; Moon Sig Joo^a ; Jae Sung Roh^a ; Cheolhwi Ryu^b ; Seunghun Hong^c ; Heonho Kim^d ; Yong Soo Kim^d ; ^{yskim2@ulsan.ac.kr"" rel=""nofollow}
• 关键词：Resistive switching memory ; Oxygen vacancy ; Interfacial reaction ; Switching mechanism
• 刊名：Solid-State Electronics
• 出版年：2011
• 出版时间：September 2011
• 年：2011
• 卷：63
• 期：1
• 页码：115-118
• 全文大小：611 K

文摘

Resistive memory switching behavior depending on voltage sweep direction is studied by intentionally creating oxygen vacancies within titanium dioxide (TiO₂). By inserting a reactive Ti layer on the TiO₂, oxygen deficient TiO_2−x layer is created, which then causes TiO_2−x/TiO₂ which has an oxygen vacancy gradient. This gradient of oxygen vacancy makes it possible to create an insulating TiO₂ layer on the bottom electrode during the first reset with a negative bias at the top electrode. This insulating layer makes counterclockwise directional bipolar switching more stable. On the other hand, under the clockwise directional voltage sweeping, the first set switching is prevented by the insulating TiO₂ layers created during the first and second reset, which leads to a short circuit due to local heating eventually.