Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devices

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• 作者：Min-Gyu Sung^a ; Yong Soo Kim^b ; ^{yskim2@ulsan.ac.kr} ; Sook Joo Kim^a ; Ii-Kyo Jeong^b ; Hak-Soon Choi^b ; Moon-Su Kim^b ; Heonho Kim^b ; Sung-Ki Park^a
• 关键词：Dual poly-metal gate ; Diffusion barrier metal ; Ring oscillator signal delay ; Low resistivity tungsten
• 刊名：Solid-State Electronics
• 出版年：2012
• 出版时间：March 2012
• 年：2012
• 卷：69
• 期：Complete
• 页码：22-26
• 全文大小：883 K

文摘

Ideal barrier metal arrangements in tungsten dual poly-metal (W/barrier metals/dual poly-Si) gates were developed for high performance, low-power and high density-memory devices. An additional metallic amorphous layer, such as TiN/WSi_x/WN, inserted at the diffusion barrier metals of Ti/WN resulted in both a low gate contact (Rc) and sheet resistance (Rs), which may result in superior improvement of the ring oscillator delay characteristics.