Characteristics of Schottky barrier silicon nanocluster floating gate flash memory

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• 作者：Daeho Son^a ; ¹ ; Jeongho Kim^a ; ² ; Kyungsu Lee^a ; ² ; Sunghwan Won^a ; ³ ; Eunkyeom Kim^b ; Tae-Youb Kim^c ; Moongyu Jang^d ; Kyoungwan Park^a ; ^b ; ^{kwpark@uos.ac.kr"" rel=""nofollow}
• 关键词：Silicon nanoclusters ; Schottky barrier metal-oxide-semiconductor field effect transistor ; Erbium silicide ; Floating gate flash memory ; Nonvolatile memory device ; Memory window
• 刊名：Thin Solid Films
• 出版年：2011
• 出版时间：1 July 2011
• 年：2011
• 卷：519
• 期：18
• 页码：6174-6177
• 全文大小：684 K

文摘

The silicon nanocluster floating gate memory device based on the Schottky barrier metal-oxide-semiconductor field effect transistor (SB-MOSFET) was proposed. The silicon nanoclusters were formed via the digital gas-feeding low pressure chemical vapor deposition. Erbium silicide process was used to form the Schottky junctions at the source/drain. In addition to the SB-MOSFET operation, the program/erase times of the nonvolatile memory device were determined to be 10 ms and 100 ms under the + 18 and − 18 V gate bias conditions, respectively. Maximum memory window was 5.5 V and the charge retention characteristics were maintained with a memory window of 0.5 V at 10⁶ s.