文摘
Epitaxial films of BaFe2(As,P)2 at optimal doping on MgO substrate have been irradiated by 250 MeV Au ions with different fluences. Irradiation induces a partial relaxation of the in-plane tensile stress typical of the pristine films. The residual resistivity increases less than linearly with fluence, tending to saturate; the overall increase is about 60%, but the critical temperature decreases by only 2%. These results indicate that the substrate and the reduced dimensionality of the films (as compared to the case of single crystals) play an important role in their response to irradiation.