Solution growth of silicon carbide using unary chromium solvent

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• 作者：Ryo Miyasaka¹ ; Sakiko Kawanishi ; ^{s-kawa@tagen.tohoku.ac.jp} ; Taka Narumi ; Hideaki Sasaki² ; Takeshi Yoshikawa ; Masafumi Maeda
• 关键词：A1. Phase equilibria ; A1. Supersaturation ; A1. Solubility ; A2. Solution growth ; B2. SiC
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：23-26
• 全文大小：701 K
• 卷排序：460

文摘

Large SiC solubilities in quasi-binary Cr–SiC system were measured. SiC solubilities was reproduced using a sub-regular solution model. Rapid growth of SiC of 720 µm/h at 1803 K was obtained by unary Cr solvent. SiC growth rates were proportional to solubility difference of carbon.