Influence of deposition pressure on p-type a-Si:H window layer doped by trimethylboron for a-Si:H superstrate solar cell in plasma enhanced chemical vapor deposition

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• 作者：Lei Zhao^a ; ^{zhaolei@mail.iee.ac.cn} ; Bending Zhao^a ; ^b ; Baojun Yan^a ; Hongwei Diao^a ; Yanli Mao^b ; Wenjing Wang^a
• 关键词：Amorphous silicon solar cell ; p-Type window layer ; Deposition pressure ; TMB doping
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2013
• 出版时间：April, 2013
• 年：2013
• 卷：16
• 期：2
• 页码：363-368
• 全文大小：600 K

文摘

Wide bandgap (E_g) p-type window layer is very important for silicon based thin film solar cell to obtain high performance, especially high open-circuit voltage (V_OC). In this work, the influence of the deposition pressure on the properties of p-type a-Si:H window layer doped by trimethylboron (TMB) in plasma enhanced chemical vapor deposition (PECVD) was investigated systematically by transmission, Raman, and Fourier transform infrared (FTIR) spectroscopies. As a result, high performance hydrogenated amorphous silicon (a-Si:H) p-i-n superstrate solar cell with V_OC up to 927 mV was successfully achieved on Asahi Type-U SnO₂:F coated glass. In this case, excellent wide bandgap p-type a-Si:H window layer was fabricated under a mild deposition condition, including a low hydrogen dilution ratio (H₂/SiH₄) of 20, a relatively high deposition temperature of 220 ¡ãC, which was also adopted for the i-layer and n-layer deposition, and a moderate deposition pressure of about 160 Pa. We think it is the compromise between wide E_g and good microstructure quality of the p-layer that brings about the good solar cell performance. Such p-type window layer will be very helpful for the fabrication of a-Si:H solar cell, especially of the cell finished in a single PECVD chamber, due to its mild deposition condition.