ZnO nanowires c-axis oriented hydrothermally grown on silicon using aqueous solutions at 90 °C.
A strong luminescence at 1.78 eV (FWHM= 0.69eV) after annealing in O2 at 650 °C.
No correlation found between the 1.78 eV emission and nitrogen impurities.
The 1.78 eV peak is assigned to VZn-related acceptor-like centers.