Performance analysis of undoped and Gaussian doped cylindrical surrounding-gate MOSFET with it's small signal modeling
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- 作者：Himangi Sooda ; himangisood@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Viranjay M. Srivastavab ; viranjay@ieee.org" class="auth_mail" title="E-mail the corresponding author ; Ghanshyam Singha ; ghanshyam.singh@juit.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Surface potential ; Short channel effect ; Double-gate MOSFET ; Cylindrical surrounding-gate MOSFET ; Gaussian doping ; Microelectronics ; VLSI
- 刊名：Microelectronics Journal
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：57
- 期：Complete
- 页码：66-75
- 全文大小：1671 K
文摘
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It is a structure of Silicon pillar surrounded by the gate in a cylindrical fashion.
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Cylindrical surrounding-gate MOSFET and equivalent circuit process has been analysed.
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Drain current, ON-resistance and transcapacitance and conductance has been presented.
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Improved results accomplished for cylindrical structure MOSFET has been realized.
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The S-parameters can be evaluated using the network analysis over the THz regime.