Evaluation of novel KEK/HPK n-in-p pixel sensors for ATLAS upgrade with testbeam

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• 作者：R. Nagai^a ; ^{nagai@hep.phys.titech.ac.jp} ; J. Idá ; rraga^b ; C. Gallrapp^c ; Y. Unno^d ; A. Lounis^b ; O. Jinnouchi^a ; Y. Takubo^d ; K. Hanagaki^e ; K. Hara^f ; Y. Ikegami^d ; N. Kimura^g ; K. Nagai^f ; I. Nakano^h ; R. Takashimaⁱ ; S. Terada^d ; J. Tojo^j ; K. Yorita^g ; S. Altenheinerⁿ ; M. Backhaus^r ; M. Bomben^l ; D. Forshaw^p ; M. George^m ; J. Janssen^r ; J. Jentzschⁿ ; T. Lapsienⁿ ; A. La Rosa^q ; A. Macchiolo^k ; G. Marchiori^l ; C. Nellist^s ; I. Rubinsky^o ; A. Rummlerⁿ ; G. Troskaⁿ ; P. Weigell^k ; J. Weingarten^m
• 关键词：Pixel detector ; n-in-p ; ATLAS ; HL-LHC
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2013
• 出版时间：21 January, 2013
• 年：2013
• 卷：699
• 期：Complete
• 页码：78-83
• 全文大小：1094 K

文摘

A new type of n-in-p planar pixel sensors have been developed at KEK/HPK in order to cope with the maximum particle fluence of 1-3¡Á10¹⁶ 1 MeV equivalent neutrons per square centimeter in the upcoming LHC upgrades. Four n-in-p devices were connected by bump-bonding to the new ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 2¡Á10¹⁵ . These planar sensors are thick, using biasing structures made out of polysilicon or punch-through dot and isolation structures of common or individual p-stop. Results of measurements with radioactive ⁹⁰Sr source and with a 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) are presented. The common p-stop isolation structure shows a better performance than the individual p-stop design, after the irradiation. The flat distribution of the collected charge in the depth direction after the irradiation implies that the effect of charge trapping is small, at the fluence, with the bias voltage well above the full depletion voltage.