Near zero thermal expansion in Ge-doped Mn₃GaN compounds

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• 作者：Yongjuan Dai^a ; Rongjin Huang^b ; Wei Wang^b ; Laifeng Li^b ; Zhonghua Sun^c ;
• 关键词：X-ray diffraction ; Thermal expansion ; Nitrides ; Magnetic properties
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：1608-1611
• 全文大小：643 K

文摘

The antiperovskite Mn₃Ga_1−xGe_xN (x=0, 0.1, 0.2, 0.3, 0.4 and 0.5) compounds were prepared by a method of solid-state sintering at 860 °C under a nitrogen atmosphere for 24 h. The Mn₃Ga_1−xGe_xN compounds were characterized by X-ray diffraction, thermal dilatometer and physical property measurement system (PPMS), respectively. The experimental results indicate that the starting temperature of negative thermal expansion (NTE) is obviously moved toward a higher temperature region with the increase of Ge content. Meanwhile, the absolute value of coefficient of NTE (|α|) decreases continuously. Accordingly, the near zero thermal expansion (ZTE) behavior is explored at an approximate temperature range of 423–475 K for Mn₃Ga_0.5Ge_0.5N. Furthermore, the mechanism of ZTE is also discussed. The present ZTE behavior serves as a valuable example for demonstrating the promise of exploring other potential ZTE materials in the family of antiperovskite manganese nitrides.