Scintillation properties of Tm-doped Lu₃Al₅O₁₂ single crystals

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• 作者：Makoto Sugiyama^a ;   ; ^{sugiyama@mail.tagen.tohoku.ac.jp} ; Yutaka Fujimoto^a ; Takayuki Yanagida^b ; Daisuke Totsuka^a ;   ; ^c ; Yuui Yokota^a ; Akira Yoshikawa^a ;   ; ^b
• 关键词：LuAG ; Scintillator ; Tm³⁺ 4f&ndash ; 4f ; Single crystal
• 刊名：Optical Materials
• 出版年：2011
• 出版时间：December 2011
• 年：2011
• 卷：34
• 期：2
• 页码：439-443
• 全文大小：607 K

文摘

Using the micro-pulling-down (¦Ì-PD) method, Tm-doped Lu₃Al₅O₁₂ (Tm:LuAG) single crystals were grown to examine their scintillation properties. In transmittance spectra, they exhibited about 80 % transparency in the wavelengths longer than 320 nm and five absorption lines due to Tm³⁺ 4f?f transitions were observed. ²⁴¹Am ¦Á-ray excited radioluminescence spectra were measured and intense 4f?f emission peaks were observed with the host emission. When excited by ¹³⁷Cs ¦Ã-Ray to obtain pulse height spectra, Tm 1 % doped LuAG showed the highest light yield coupled with a photomultiplier (PMT) or a silicon avalanche photodiode (Si-APD). The light yield was estimated to be 5800 and 7300 photons/MeV for PMT and Si-APD, respectively. Decay time profiles consist of two exponential components and the fast and slow components are considered to be attributed to the host and the combination of the host and Tm³⁺ 4f?f emission, respectively.