Scintillation properties of Ce doped Gd₂Lu₁(Ga,Al)₅O₁₂ single crystal grown by the micro-pulling-down method

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• 作者：Kei Kamada ; Takayuki Yanagida ; Jan Pejchal ; Martin Nikl ; Takanori Endo ; Kousuke Tsutsumi ; Yoshiyuki Usuki ; Yutaka Fujimoto ; Akihiro Fukabori ; Akira Yoshikawa
• 关键词：A2. Single crystal growth ; B1.Oxides ; B2. Scintillator materials ; B3. Scintillators
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 出版时间：1 August, 2012
• 年：2012
• 卷：352
• 期：1
• 页码：35-38
• 全文大小：567 K

文摘

Ce:Gd₂Lu₁(Ga,Al)₅O₁₂ single crystals were grown by the micro-pulling down (¦Ì-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al³⁺ sites by Ga³⁺ and at the Lu³⁺ sites by Gd³⁺ in garnet structure has been studied. In these crystals, Ce³⁺ 4f-5d emission is observed with 500-530 nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1 % : Gd₂Lu₁Ga₃Al₂O₁₂ shows the highest emission intensity. The light yield of Ce:Gd₂Lu₁Ga₃Al₂O₁₂ sample with 3 mm¦Õ¡Á1 mm size was around 22,000 photon/MeV using calibration from ⁵⁵Fe direct irradiation peak to APD. Scintillation decay time was around 50 ns. The theoretical density is 6.88 g/cm³.