Growth and scintillation properties of Pr doped Gd₃(Ga,Al)₅O₁₂ single crystals

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• 作者：Kei Kamada ; Takayuki Yanagida ; Jan Pejchal ; Martin Nikl ; Takanori Endo ; Kousuke Tsutumi ; Yoshiyuki Usuki ; Yutaka Fujimoto ; Akihiro Fukabori ; Akira Yoshikawa
• 关键词：A2. Single crystal growth ; B1. Oxides ; B2. Scintillator materials ; B3. Scintillators
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 出版时间：1 August, 2012
• 年：2012
• 卷：352
• 期：1
• 页码：84-87
• 全文大小：545 K

文摘

Pr:Gd₃(Ga,Al)₅O₁₂ single crystals were grown by the micro-pulling down (¦Ì-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al³⁺ sites by Ga³⁺ in garnet structure has been studied. In these crystals, Pr³⁺ 5d-4f emission is observed with 340 nm wavelength. Pr1 % :Gd₃Ga₃Al₂O₁₂ shows highest emission intensity. The light yield of Pr:Gd₃Ga₃Al₂O₁₂ sample with 3 mm¦Õ¡Á1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5 % ), 46 ns (0.7 % ) and 214 ns (98.8 % ).