Thin-film formation of Si clathrates on Si wafers

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• 作者：Fumitaka Ohashi ; Yoshiki Iwai ; Akihiro Noguchi ; Tomoya Sugiyama ; Masashi Hattori ; Takuya Ogura ; Roto Himeno ; Tetsuji Kume ; Takayuki Ban ; Shuichi Nonomura
• 关键词：Silicon clathrate ; Sodium silicide ; Thermal decomposition ; Thin film
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：April, 2014
• 年：2014
• 卷：75
• 期：4
• 页码：518-522
• 全文大小：1498 K

文摘

In this study, we prepared Si clathrate films (Na₈Si₄₆ and Na_xSi₁₃₆) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 掳C (3 h) under vacuum (<10^鈭? Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na₈Si₄₆ and Na_xSi₁₃₆ using the appropriate crystalline orientation of Si substrates.