Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films
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- 作者：Naoki Hatsuta ; Daichi Takemori ; Masayuki Takashiri ; takashiri@tokai-u.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Electrodeposition ; Antimony telluride ; Thermoelectric ; Thermal annealing ; Thin films
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 November 2016
- 年：2016
- 卷：685
- 期：Complete
- 页码：147-152
- 全文大小：1144 K
文摘
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P-type Sb2Te3 thin films were deposited on SUS304 substrate by electrodeposition.
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We performed CV analysis to determine the appropriate potential at −0.1 V.
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Thermal annealing was performed at the temperatures from 200–400 °C for 1 h.
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Impurities (Fe, Cr, Ni) were observed at the annealing temperature over 300 °C.
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The thin film obtained a maximum power factor of 13.6 μW/(cm K2) at 300 °C.