Reactive ion etching of FePt using inductively coupled plasma

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• 作者：Tomomi Kanazawa ; Kohei Ono ; Masato Takenaka ; Masashi Yamazaki ; Kenichi Masuda ; Shiho Cho ; Takayuki Wakayama ; Fumiyoshi Takano ; Hiro Akinaga
• 关键词：Reactive ion etching ; Plasma ; Magnetic material ; FePt ; Ti
• 刊名：Applied Surface Science
• 出版年：2008
• 出版时间：30 September 2008
• 年：2008
• 卷：254
• 期：23
• 页码：7918-7920
• 全文大小：608 K

文摘

We propose a reactive ion etching (RIE) process of an L1₀-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH₄/O₂/NH₃ was employed. The L1₀-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of 16 and 0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (R_a) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L1₀-FePt was successfully realized in the present study.