Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors

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• 作者：Manato Deki ; Takahiro Makino ; Naoya Iwamoto ; Shinobu Onoda ; Kazutoshi Kojima ; Takuro Tomita ; Takeshi Ohshima
• 关键词：Silicon carbide ; Metal-oxide-semiconductor capacitor ; Heavy ion irradiation ; Single-event gate rupture
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：15 January, 2014
• 年：2014
• 卷：319
• 期：Complete
• 页码：75-78
• 全文大小：689 K

文摘

Metal-oxide-semiconductor (MOS) capacitors were fabricated on n-type 4H silicon carbide (SiC) epitaxial layers grown on n-type 4H-SiC substrates, and the currents through the gate oxide of the MOS capacitors were measured under accumulation bias conditions during heavy-ion irradiation. Evaluation of the linear energy transfer (LET) dependence of the critical electric field (E_cr) at which dielectric breakdown occurred in these capacitors revealed that the reciprocal of E_cr (1/E_cr) increased linearly with increasing LET. The slope of LET dependence of 1/E_cr for SiC is lower than that for Si, suggesting that SiC MOS devices are less susceptible to single-event gate rupture (SEGR) than Si MOS devices. The limitation of previously proposed SEGR models based on SiO₂ on Si is discussed, as is the importance of the physical parameters of the oxide and semiconductor materials (bandgap, carrier lifetime and mobility, etc.).