Al-oxynitrides as a buffer layer for Pr₂O₃/SiC interfaces

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• 作者：Rakesh Sohal ; Mohamed Torche ; Karsten Henkel ; Patrick Hoffmann ; Massimo Tallarida ; Dieter Schmeiß ; er
• 关键词：Aluminum-nitride ; High-k dielectric ; Praseodymium oxide ; SR-PES
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2006
• 出版时间：December 2006
• 年：2006
• 卷：9
• 期：6
• 页码：945-948
• 全文大小：234 K

文摘

We elaborate the possibility of combining high-k dielectrics with wide band gap semiconductors, i.e. Pr₂O₃ on SiC. The thermal stability of interfacial aluminum oxynitride (AlON) layers between Pr-oxide and SiC has been investigated by synchrotron radiation photoemission spectroscopy (SRPES). The interface of Pr₂O₃ with SiC is reactive. Such reaction is successfully prevented by utilizing a stable interlayer derived from AlON. No elemental carbon is observed in detectable amount after Pr-Oxide deposition on AlON covered 3C-SiC and subsequent vacuum annealing. After vacuum annealing at 500 °C AlON transformed to AlN and Pr-aluminate with a small amount of CN close to the SiC surface which were thermally stable even at 900 °C. AlON hence provides a good diffusion barrier between Pr-oxide dielectric and 3C-SiC.