Study of bulk and interface defects in silicon oxide with X-ray absorption spectroscopy

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• 作者：Massimo Tallarida ; Dieter Schmeisser
• 关键词：Silicon oxide ; X-ray absorption ; Defects
• 刊名：Materials Science and Engineering: B
• 出版年：2007
• 出版时间：25 November 2007
• 年：2007
• 卷：144
• 期：1-3
• 页码：23-26
• 全文大小：186 K

文摘

We show in this work a detailed study of the SiO₂/Si interface by means of X-ray absorption spectroscopy (XAS). The Si2p absorption edge was measured for both a thick (50 nm) oxide layer and a native (1.5 nm) oxide. From the comparison between these two spectra we can address XAS features to bulk defects in SiO₂ and to interface defects in the native oxide. We demonstrate the capability of XAS of achieving information about interface defects and suggest its use in more complex systems.