Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene

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• 作者：Kaupo Kukli ; Jaan Aarik ; Aleks Aidla ; Teet Uustare ; Indrek Jõ ; gi ; Jun Lu ; Massimo Tallarida ; Marianna Kemell ; Alma-Asta Kiisler ; Mikko Ritala ; Markku Leskelä
• 关键词：A1. Crystal morphology ; A1. Substrates ; A1. Roughening ; A3. Chemical vapor deposition processes ; A3. Atomic layer epitaxy ; A3. Polycrystalline deposition
• 刊名：Journal of Crystal Growth
• 出版年：2010
• 出版时间：1 June 2010
• 年：2010
• 卷：312
• 期：12-13
• 页码：2025-2032
• 全文大小：1191 K

文摘

Ru thin films were grown on TiO₂, Al₂O₃, HfO₂, and ZrO₂ films as well as on HF-etched silicon and SiO₂-covered silicon by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene, (CH₃C₅H₄)(C₂H₅C₅H₄)Ru, and oxygen. The growth of Ru was obtained and characterized at temperatures ranging from 250 to 325 °C. On epitaxial rutile, highly oriented growth of Ru with hexagonal structure was achieved, while on other substrates the films possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films. The lowest resistivity value obtained for 5.0–6.6 nm thick films was 26 μΩ cm. The conductivity of the films depended somewhat on the deposition cycle time parameters and, expectedly, more strongly on the amount of deposition cycles. Increase in the deposition temperature of underlying metal oxide films increased the conductivity of Ru layers.