In situ studies of the atomic layer deposition of thin HfO₂ dielectrics by ultra high vacuum atomic force microscope

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• 作者：Krzysztof Kolanek ; Massimo Tallarida ; Konstantin Karavaev ; Dieter Schmeisser
• 关键词：Atomic layer deposition ; High-k dielectric thin films ; Atomic force microscopy
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：1 June 2010
• 年：2010
• 卷：518
• 期：16
• 页码：4688-4691
• 全文大小：1047 K

文摘

We studied in situ the initial stages of atomic layer deposition (ALD) of HfO₂ by an ultra high vacuum atomic force microscope working in frequency-modulation mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and water as precursors, were performed on the Si(001)/SiO₂ substrate maintained at 230 °C. After each ALD cycle we studied the influence of the HfO₂ growth on the surface height histogram, the root mean square roughness, the surface fractal dimension and the autocorrelation function. This detailed analysis of the surface topography allowed us to confirm the completion of the first HfO₂ layer after four ALD cycles.