Fabrication of particular structures of hexagonal boron nitride and boron-carbon-nitrogen layers by anisotropic etching
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- 作者：Riteshkumar Vishwakarma ; Subash Sharma ; Sachin M. Shinde ; Kamal P. Sharma ; Amutha Thangaraja ; Golap Kalita ; kalita.golap@nitech.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Masaki Tanemura
- 关键词：Anisotropic etching ; Hexagonal boron nitride ; Boron&ndash ; carbon&ndash ; nitrogen ; Nanoribbons
- 刊名：Physica E: Low-dimensional Systems and Nanostructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：79
- 期：Complete
- 页码：13-19
- 全文大小：2857 K
文摘
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Demonstrated anisotropic etching of h-BN for nanoribbons fabrication.
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Synthesis of BCN layers using mixture of solid sources and their anisotropic etching.
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Raman studies confirm B and N incorporation in graphene and BCN layer formation.
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SiO2 nanoparticles incorporated during growth assisted H2-induced etching process.
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The etching process is significant to fabricate various h-BN related novel structures.