Resistive switching characteristics in manganese oxide and tantalum oxide devices
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- 作者：Quanli Hua ; Yawar Abbasa ; Haider Abbasa ; Mi Ra Parka ; Tae-Sik Yoonb ; Chi Jung Kanga ; cjkang@mju.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Resistive switching ; Manganese oxide ; Tantalum oxide ; Self-compliance
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：1 July 2016
- 年：2016
- 卷：160
- 期：Complete
- 页码：49-53
- 全文大小：1031 K
文摘
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The resistive switching behaviors with heterostructure were demonstrated.
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The monodisperse oxide nanoparticles were chemically synthesized.
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The device showed bipolar switching and repeatable self-compliance properties.
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The bipolar switching was caused by the formation and rupture of conductive filaments in oxide layer.
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The stable self-compliance property was demonstrated.