The ex situ deposited graphene oxide thick film on the polycrystalline Ta surface demonstrated porosity about 1%. The thermal annealing of the graphene oxide in ultra high vacuum was followed by an increase of the uncovered Ta surface. The formation of the TaC compound on the Ta surface in presence of graphene oxide at elevated temperatures was determined. The concentration of the phenolic component within the graphene oxide layer was stable after the annealing at 400 °С.