Enhanced crystal grain size by bromine doping in electrodeposited Cu₂O

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• 作者：Kunhee Han^a ; Feng Kang^a ; Xiaofei Han^b ; Meng Tao^a ; ^{meng.tao@asu.edu}
• 关键词：Cuprous oxide ; Doping ; Crystal morphology ; Nucleation ; Electrochemical deposition ; X-ray diffraction ; Scanning electron microscopy
• 刊名：Thin Solid Films
• 出版年：2012
• 出版时间：1 June, 2012
• 年：2012
• 卷：520
• 期：16
• 页码：5239-5244
• 全文大小：1072 K

文摘

Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu₂O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000 ¦Ìm² in area, or ~ 100 ¦Ìm in linear dimension, while the film is only 1-5 ¦Ìm thick. The enhanced grain size is explained by the effect of over-potential for the Cu²⁺/Cu⁺ redox couple on nucleation density of Cu₂O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu₂O displays a high resistivity of 100 M¦¸cm. Bromine doping in Cu₂O significantly reduces the resistivity to as low as 42 ¦¸cm after vacuum annealing. Br-doped Cu₂O shows n-type behavior.