Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

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• 作者：C. Kriso^a ; F. Triozon^b ; ^c ; ^{francois.triozon@cea.fr} ; C. Delerue^d ; L. Schneider^a ; F. Abbate^a ; E. Nolot^b ; ^c ; D. Rideau^a ; Y.-M. Niquet^e ; ^c ; G. Mugny^a ; C. Tavernier^a
• 关键词：Simulation ; Thin silicon films ; SiGe ; Optical response ; Ellipsometry
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：93-96
• 全文大小：570 K
• 卷排序：129

文摘

The optical response of Si and SiGe films is computed using a tight-binding approach. The calculations are compared with spectroscopic ellipsometry measurements. The influence of Ge concentration on the optical response is discussed. The influence of film thickness is attributed to quantum confinement effect.