Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

详细信息    查看全文

• 作者：M. Baselga ; G. Pellegrini ; ^{giulio.pellegrini@imb-cnm.csic.es} ; D. Quirion
• 关键词：3D-Si sensors ; ATLAS pixel upgrade ; TCAD simulation
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：847
• 期：Complete
• 页码：67-76
• 全文大小：2710 K
• 卷排序：847

文摘

The LHC is expected to reach luminosities up to 3000 fb−1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non-passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade. It shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large η angles.